Kuleli sonto inkampani yaseChina iYMTC ekuthuthukisweni kwememori ye-flash ye-128D NAND ephula irekhodi ephula irekhodi engu-3. AmaShayina azokweqa isigaba sokukhiqiza senkumbulo enezingqimba ezingama-96 futhi ekupheleni konyaka azoqala ngokushesha ukukhiqiza inkumbulo enezingqimba eziyi-128. Ngaleyo ndlela bazofinyelela ezingeni labaholi bemboni, elilingana nokuphephezelisa indwangu ebomvu phambi kwenkunzi. Futhi "izinkunzi" zenze njengoba bekulindelekile.
Isiza saseNingizimu Korea i-ETNews namuhla ukuthi i-Samsung isheshise ukuthuthukiswa kwe-160-layer 3D NAND (noma i-V-NAND, njengoba inkampani ibiza inkumbulo ye-flash enezingqimba eziningi). AbakwaSamsung bakubiza ngokuthi βi-super gapβ isu, noma ukudlala phambili, okufanele kusize abaholi bezobuchwepheshe baseNingizimu Korea ukuthi bahlale ngaphambi komncintiswano. Njengoba impumelelo yakwaSamsung isenhliziyweni yomnotho waseNingizimu Korea, kuyindaba yokuchuma kwesizwe sonke, ngakho inkampani iwuthatha ngokungathi sΓna umsebenzi wayo.
AbakwaSamsung bethule inkumbulo enezendlalelo eziyi-100+ ngaphakathi . Singacabanga ukuthi inkampani ibikhipha inkumbulo yezendlalelo eziyi-128 ngekota yesithathu ilandelana (inani eliqondile lezendlalelo alaziwa ngokuqinisekile). Okulandelayo esigcawini kufanele kube inkumbulo ye-Samsung enezendlalelo eziyi-160 noma ngaphezulu. Izoba eyesizukulwane sesi-7 senkumbulo ye-V-NAND. Ngokusho kwamahemuhemu, inkampani isithuthuke kakhulu ekuthuthukisweni kwayo. Kunombono wokuthi i-Samsung izoba ngeyokuqala ukufinyelela uphawu lwezendlalelo ezingu-160, njengoba kwenzeka kuzo zonke izizukulwane ezedlule zenkumbulo ye-3D NAND.
Source: 3dnews.ru