Namuhla i-Samsung Electronics mayelana nezinhlelo zokuthuthukiswa kwezinqubo zobuchwepheshe zokukhiqiza ama-semiconductors. Inkampani ibheka ukudalwa kwamaphrojekthi edijithali ama-chips angu-3-nm okuhlola asekelwe kuma-transistors anelungelo lobunikazi be-MBCFET njengempumelelo eyinhloko yamanje. Lawa ama-transistors aneziteshi eziningi ezivundlile ze-nanopage kumasango e-FET aqondile (I-Multi-Bridge-Channel FET).
Njengengxenye yombimbi ne-IBM, abakwaSamsung bathuthukise ubuchwepheshe obuhluke kancane bokukhiqiza ama-transistors aneziteshi ezizungezwe ngokuphelele amasango (i-GAA noma i-Gate-All-Around). Iziteshi bekufanele zenziwe zibe mncane ngendlela yama-nanowires. Ngokulandelayo, i-Samsung yasuka kulolu hlelo futhi yagunyaza ukwakheka kwe-transistor eneziteshi ngendlela yama-nanopages. Lesi sakhiwo sikuvumela ukuthi ulawule izici zama-transistors ngokukhohlisa kokubili inani lamakhasi (amashaneli) nangokulungisa ububanzi bamakhasi. Ngobuchwepheshe be-FET yakudala, ukuqondisa okunjalo akunakwenzeka. Ukwandisa amandla e-FinFET transistor, kuyadingeka ukuphindaphinda inani le-FET fins ku-substrate, futhi lokhu kudinga indawo. Izici ze-MBCFET transistor zingashintshwa ngaphakathi kwesango elilodwa lomzimba, okudingeka ubeke ububanzi beziteshi nenombolo yazo.
Ukutholakala kwedizayini yedijithali (ekhishiwe) ye-prototype chip yokukhiqizwa kusetshenziswa inqubo ye-GAA kuvumela abakwaSamsung ukuthi banqume imikhawulo yamakhono ama-transistors e-MBCFET. Kufanele kukhunjulwe ukuthi lokhu kuseyidatha yemodeli yekhompiyutha futhi inqubo entsha yobuchwepheshe ingahlulelwa ekugcineni ngemva kokuba yethulwe ekukhiqizeni ngobuningi. Nokho, kukhona isiqalo. Le nkampani ithe uguquko olusuka ohlelweni lwe-7nm (ngokusobala isizukulwane sokuqala) luye kwinqubo ye-GAA luzohlinzeka ngokunciphisa ngo-45% endaweni yokufa kanye nokunciphisa ukusetshenziswa kwama-50%. Uma ungawongi ekusetshenzisweni, umkhiqizo ungakhuphuka ngo-35%. Ngaphambilini, abakwaSamsung babone izinzuzo zokonga kanye nokukhiqiza lapho bethuthela kunqubo ye-3nm ihlukaniswe ngamakhoma. Kwavela ukuthi kukodwa noma okunye.
Le nkampani ibheka ukulungiselelwa kwenkundla yefu yomphakathi yabathuthukisi be-chip abazimele kanye nezinkampani ze-fabless njengephuzu elibalulekile ekwandiseni ubuchwepheshe benqubo ye-3nm. AbakwaSamsung abazange bafihle indawo yokuthuthukiswa, ukuqinisekiswa kwephrojekthi kanye nemitapo yolwazi kumaseva okukhiqiza. Inkundla ye-SAFE (Samsung Advanced Foundry Ecosystem Cloud) izotholakala kubaklami emhlabeni jikelele. Inkundla yamafu e-SAFE yakhiwe ngokubamba iqhaza kwezinsizakalo ezinkulu zamafu zomphakathi njenge-Amazon Web Services (AWS) kanye ne-Microsoft Azure. Abathuthukisi bezinhlelo zokuklama abavela ku-cadence kanye ne-Synopsys banikeze amathuluzi abo okuklama ngaphakathi kwe-SAFE. Lokhu kuthembisa ukwenza kube lula futhi kushibhile ukudala izixazululo ezintsha zezinqubo ze-Samsung.
Uma sibuyela kubuchwepheshe benqubo ye-Samsung ye-3nm, ake sengeze ukuthi inkampani yethule inguqulo yokuqala yephakheji yayo yokuthuthukiswa kwe-chip - 3nm GAE PDK Version 0.1. Ngosizo lwayo, ungaqala ukuklama izixazululo ze-3nm namuhla, noma okungenani ulungiselele ukuhlangabezana nale nqubo ye-Samsung lapho isisabalele.
AbakwaSamsung bamemezela izinhlelo zabo zesikhathi esizayo ngale ndlela elandelayo. Engxenyeni yesibili yalo nyaka, kuzokwethulwa ukukhiqizwa ngobuningi kwama-chips kusetshenziswa inqubo ye-6nm. Ngesikhathi esifanayo, ukuthuthukiswa kobuchwepheshe benqubo ye-4nm kuzoqedwa. Ukuthuthukiswa kwemikhiqizo yokuqala ye-Samsung esebenzisa inqubo ye-5nm kuzoqedwa kulokhu kuwa, futhi ukukhiqizwa kwethulwe engxenyeni yokuqala yonyaka ozayo. Futhi, ekupheleni kwalo nyaka, i-Samsung izoqedela ukuthuthukiswa kobuchwepheshe benqubo ye-18FDS (18 nm kuma-wafers e-FD-SOI) kanye nama-chips angu-1-Gbit eMRAM. Ubuchwepheshe benqubo obusuka ku-7 nm ukuya ku-3 nm buzosebenzisa izikena ze-EUV ngomfutho okhulayo, kwenze yonke i-nanometer ibale. Ngokuqhubekayo endleleni eya phansi, zonke izinyathelo zizothathwa ngokulwa.
Source: 3dnews.ru