Njengoba sazi, ngoMashi walo nyaka, i-TSMC yaqala ukukhiqiza imikhiqizo engu-5nm. Lokhu kwenzeke esitshalweni esisha se-Fab 18 eTaiwan, ukuze kukhishwe izixazululo ze-5nm. Ukukhiqizwa ngobuningi kusetshenziswa inqubo ye-5nm N5 kulindeleke kwikota yesibili ka-2020. Ekupheleni konyaka ofanayo, ukukhiqizwa kwama-chips asekelwe kubuchwepheshe benqubo ye-5nm ekhiqizayo noma i-N5P (ukusebenza) izokwethulwa. Ukutholakala kwe-prototype chips kuvumela i-TSMC ukuthi ihlole amakhono ama-semiconductors azayo akhiqizwa ngokususelwa kubuchwepheshe benqubo obusha, inkampani ezokhuluma ngabo ngokuningiliziwe ngoDisemba. Kodwa ungakwazi kakade ukuthola okuthile kusuka kumafuphi athunyelwe yi-TSMC ukuze wethulwe ku-IEDM 2019.
Ngaphambi kokucacisa imininingwane, masikhumbule esikwaziyo ezitatimendeni ezedlule ezivela ku-TSMC. Uma kuqhathaniswa nenqubo ye-7nm, kuthiwa ukusebenza kahle kwe-5nm chips kuzokwenyuka ngo-15% noma ukusetshenziswa kuzokwehla ngo-30% uma ukusebenza kusafana. Inqubo ye-N5P izokwengeza omunye umkhiqizo ongu-7% noma ukonga okungu-15% ekusetshenzisweni. Ukuminyana kwezinto ezinengqondo kuzokhuphuka izikhathi ezingu-1,8. Isikali seseli ye-SRAM sizoshintsha nge-factory engu-0,75.
Ekukhiqizeni ama-chips angu-5nm, isikali sokusetshenziswa kwezikena ze-EUV sizofinyelela izinga lokukhiqiza okuvuthiwe. Isakhiwo sesiteshi se-transistor sizoshintshwa, mhlawumbe ngokusebenzisa i-germanium kanye noma esikhundleni se-silicon. Lokhu kuzoqinisekisa ukuhamba okukhulayo kwama-electron esiteshini kanye nokwanda kwemisinga. Ubuchwepheshe benqubo buhlinzeka ngamazinga kagesi amaningana okulawula, aphezulu kakhulu azohlinzeka ngokukhuphuka kokusebenza okungu-25% uma kuqhathaniswa okufanayo kubuchwepheshe benqubo ye-7 nm. Ukunikezwa kwamandla we-transistor kwezindawo zokusebenzelana ze-I/O kuzosukela ku-1,5 V kuye ku-1,2 V.
Ekukhiqizeni ngokusebenzisa izimbobo ze-metalization kanye noxhumana nabo, izinto zokwakha ezinokumelana okuphansi kakhulu zizosetshenziswa. I-ultra-high-density capacitor izokwenziwa kusetshenziswa i-metal-dielectric-metal circuit, okuzokwandisa umkhiqizo ngo-4%. Sekukonke, i-TSMC izoshintshela ekusebenziseni ama-insulators e-low-K amasha. Inqubo entsha βeyomileβ, i-Metal Reactive Ion Etching (RIE), izovela kusiyingi sokucubungula i-silicon wafer, ezothatha indawo yenqubo yeDamaseku yendabuko kusetshenziswa ithusi (kokuxhumana kwensimbi okungaphansi kuka-30 nm). Futhi ngokokuqala ngqa, ungqimba lwe-graphene luzosetshenziselwa ukudala umgoqo phakathi kwabaqhubi bethusi kanye ne-semiconductor (ukuvimbela ukufuduka kwe-electromigration).
Kusuka kumadokhumenti ombiko kaDisemba kwa-IEDM, singathola ukuthi inani lamapharamitha ama-chips angu-5nm azoba ngcono nakakhulu. Ngakho-ke, ukuminyana kwezakhi ze-logic kuzoba phezulu futhi kufinyelele izikhathi ezingu-1,84. Iseli le-SRAM nalo lizoba lincane, libe nendawo engu-0,021 Β΅m2. Konke kuhlelekile ngokusebenza kwe-silicon yokuhlola - ukukhuphuka okungu-15% kutholwe, kanye nokwehliswa okungaba ngu-30% kokusetshenziswa esimweni sokuqandisa kwamafrikhwensi aphezulu.
Ubuchwepheshe benqubo obusha buzokwenza kube lula ukukhetha kumanani kagesi okulawula ayisikhombisa, okuzokwengeza ukuhlukahluka ohlelweni lokuthuthukiswa kanye nemikhiqizo, futhi ukusetshenziswa kwezikena ze-EUV kuzokwenza kube lula ukukhiqiza futhi kukwenze kushibhe. Ngokusho kwe-TSMC, ukushintshela kuzikena ze-EUV kunikeza ukuthuthuka okungu-0,73x ekulungisweni komugqa uma kuqhathaniswa nenqubo ye-7nm. Isibonelo, ukukhiqiza izendlalelo ze-metalization ezibaluleke kakhulu zezendlalelo zokuqala, esikhundleni samaski amahlanu avamile, kuzodingeka imaski eyodwa ye-EUV futhi, ngokufanele, umjikelezo wokukhiqiza owodwa kuphela esikhundleni samahlanu. Phela, naka ukuthi izinto eziku-chip zibukeka kanjani uma usebenzisa ukuqagela kwe-EUV. Ubuhle, futhi yilokho kuphela.
Source: 3dnews.ru