Njengoba kuye kwabikwa izikhathi eziningi, kufanele kwenziwe okuthile nge-transistor encane kuno-5 nm. Namuhla, abakhiqizi bama-chip bakhiqiza izixazululo ezithuthuke kakhulu besebenzisa amasango e-FinFET aqondile. Ama-transistors e-FinFET asengakhiqizwa kusetshenziswa izinqubo zobuchwepheshe ze-5-nm kanye ne-4-nm (noma ngabe lezi zindinganiso zisho ukuthini), kodwa kakade esigabeni sokukhiqizwa kwama-semiconductors angu-3-nm, izakhiwo ze-FinFET ziyayeka ukusebenza ngendlela okufanele zisebenze ngayo. Amasango ama-transistors mancane kakhulu futhi i-voltage yokulawula ayiphansi ngokwanele ukuze ama-transistors aqhubeke nokwenza umsebenzi wawo njengamasango kumasekethe ahlanganisiwe. Ngakho-ke, imboni futhi, ikakhulukazi, i-Samsung, kusukela kubuchwepheshe benqubo ye-3nm, izoshintshela ekukhiqizeni ama-transistors anendandatho noma ahlanganisa wonke amasango e-GAA (Gate-All-Around). Ngokukhishwa kwabezindaba kwakamuva, abakwaSamsung basanda kwethula i-infographic ebonakalayo mayelana nesakhiwo sama-transistors amasha kanye nezinzuzo zokuwasebenzisa.
Njengoba kuboniswe emfanekisweni ongenhla, njengoba izindinganiso zokukhiqiza ziye zehla, amasango ashintshile esuka ezinhlakeni zepulani ezingalawula indawo eyodwa ngaphansi kwesango, ukuya eziteshini eziqondile ezizungezwe isango ezinhlangothini ezintathu, futhi ekugcineni asondela eduze kwemigudu ezungezwe amasango zonke izinhlangothi ezine. Yonke le ndlela yayihambisana nokwanda kwendawo yesango ezungeze isiteshi esilawulwayo, okwenza kube lula ukunciphisa ukunikezwa kwamandla kuma-transistors ngaphandle kokuyekethisa izici zamanje zama-transistors, ngakho-ke, okuholela ekwandeni kokusebenza kwama-transistors. kanye nokuncipha kwemisinga yokuvuza. Mayelana nalokhu, ama-transistors e-GAA azoba umqhele omusha wokudala futhi ngeke adinge ukusetshenzwa kabusha okubalulekile kwezinqubo zobuchwepheshe zakudala ze-CMOS.
Iziteshi ezizungezwe isango zingakhiqizwa ngendlela yamabhuloho amancane (ama-nanowires) noma ngendlela yamabhuloho abanzi noma ama-nanopages. AbakwaSamsung bamemezela ukukhetha kwabo okuvuna ama-nanopages kanye nezimangalo zokuvikela ukuthuthukiswa kwayo ngamalungelo obunikazi, nakuba ithuthukise zonke lezi zakhiwo ngenkathi isangena kumfelandawonye ne-IBM nezinye izinkampani, ngokwesibonelo, ne-AMD. AbakwaSamsung ngeke babize ama-transistors amasha nge-GAA, kodwa igama lobunikazi elithi MBCFET (Multi Bridge Channel FET). Amakhasi wesiteshi esibanzi azohlinzeka ngemisinga ebalulekile, okunzima ukuyifinyelela esimweni seziteshi ze-nanowire.
Ukushintshela kumasango ayindandatho kuzophinde kuthuthukise ukusebenza kahle kwamandla kwezakhiwo ezintsha ze-transistor. Lokhu kusho ukuthi i-voltage yokuhlinzeka yama-transistors ingancishiswa. Kuzakhiwo ze-FinFET, inkampani ibiza umkhawulo wokunciphisa amandla onemibandela ngokuthi 0,75 V. Ukushintshela kuma-transistors we-MBCFET kuzokwehlisa lo mkhawulo ngisho nangaphansi.
Inkampani ibiza inzuzo elandelayo ye-MBCFET transistors ukuguquguquka okungavamile kwezixazululo. Ngakho-ke, uma izici ze-FinFET transistors esigabeni sokukhiqiza zingalawulwa kuphela ngokusobala, kufakwa inani elithile lamaphethelo kuphrojekthi ye-transistor ngayinye, khona-ke ukuklama amasekhethi ane-MBCFET transistors kuzofana nokushuna okuhle kakhulu kwephrojekthi ngayinye. Futhi lokhu kuzoba lula kakhulu ukwenza: kuyoba okwanele ukukhetha ububanzi obudingekayo beziteshi ze-nanopage, futhi le pharamitha ingashintshwa ngokuqondile.
Ukuze kukhiqizwe ama-transistors e-MBCFET, njengoba kushiwo ngenhla, ubuchwepheshe benqubo ye-CMOS yakudala kanye nemishini yezimboni efakwe ezimbonini kufanelekile ngaphandle kwezinguquko ezibalulekile. Isiteji sokucubungula kuphela sama-wafers e-silicon sizodinga ukuguqulwa okuncane, okuqondakalayo, futhi yilokho kuphela. Ngasohlangothini lwamaqembu oxhumana nabo kanye nezendlalelo ze-metallization, awudingi ngisho nokushintsha noma yini.
Sengiphetha, abakwaSamsung okokuqala ngqa banikeza incazelo yekhwalithi yentuthuko ezolethwa ukuguqukela kubuchwepheshe benqubo ye-3nm kanye nama-MBCFET transistors (ukucacisa, i-Samsung ayikhulumi ngokuqondile ngobuchwepheshe benqubo ye-3nm, kodwa ngaphambilini ibike ukuthi ubuchwepheshe benqubo ye-4nm zisazosebenzisa ama-FinFET transistors). Ngakho-ke, uma kuqhathaniswa nobuchwepheshe benqubo ye-7nm FinFET, ukuthuthela esimweni esisha futhi i-MBCFET izohlinzeka ngokunciphisa ukusetshenziswa kwe-50%, ukwanda kwe-30% ekusebenzeni kanye nokunciphisa kwe-45% endaweni ye-chip. Hhayi “noma, noma”, kodwa ngokuphelele. Kuzokwenzeka nini lokhu? Kungenzeka ukuthi ekupheleni kuka-2021.
Source: 3dnews.ru