🥇"Ukuphulwa" Umthetho ka-Moore: Transistor Technologies of the future

Sikhuluma ngezinye izindlela esikhundleni se-silicon.

/isithombe ULaura Ockel Unsplash

Umthetho kaMoore, uMthetho kaDennard, kanye noMthetho ka-Koomey alahlekelwa ukubaluleka kwawo. Esinye sezizathu ukuthi ama-silicon transistors asondela emikhawulweni yawo yezobuchwepheshe. Lesi sihloko sihlanganise kabanzi. kokuthunyelwe kwangaphambiliniNamuhla sixoxa ngezinto ezingase zithathe indawo ye-silicon futhi zandise ukufaneleka kwemithetho emithathu, ngaleyo ndlela kwandise ukusebenza kahle kwamaphrosesa kanye nezinhlelo zekhompuyutha ezizisebenzisayo (okuhlanganisa namaseva ezikhungweni zedatha).
 

I-carbon nanotubes

Ama-nanotubes e-carbon angamasilinda anezindonga zawo ezihlanganisa ungqimba lwe-athomu eyodwa ye-carbon. Irediyasi yama-athomu ekhabhoni incane kunaleyo ye-silicon, ngakho-ke ama-transistors asekelwe ku-nanotube anokunyakaza kwama-electron aphezulu kanye nokuminyana kwamanje. Lokhu kuphumela ekwenyukeni kwesivinini se-transistor nokuncipha kokusetshenziswa kwamandla. ngokusho Onjiniyela abavela eNyuvesi yaseWisconsin-Madison, ukukhiqiza kukhuphuka ngokuphindwe kahlanu.

Iqiniso lokuthi i-carbon nanotubes inezici ezingcono kune-silicon beyaziwa isikhathi eside - ama-transistors okuqala avela. eminyakeni engu-20 edluleKodwa muva nje ososayensi sebekwazile ukunqoba ukulinganiselwa kwezobuchwepheshe ukuze bakhe umshini osebenza kahle ngokwanele. Eminyakeni emithathu edlule, izazi zefiziksi ezivela eNyuvesi yaseWisconsin okukhulunywe ngazo ngenhla zethule i-prototype transistor esekwe ku-nanotube eyenza kahle kakhulu kunamadivayisi esimanje e-silicon.

I-Flexible electronics uhlelo lokusebenza olulodwa lwamadivayisi asekelwe ku-carbon nanotube. Kodwa-ke, ubuchwepheshe abukakwenzi kube ngaphezu kwelabhorethri, futhi akukho nkulumo mayelana nokutholwa kwayo okusabalele.

Ama-nanoribhoni we-graphene

Ziyimicu emincane igraphene amashumi amaningana ama-nanometers ububanzi futhi kuyabhekwa enye yezinto eziyinhloko zokwakha ama-transistors azayo. Impahla eyinhloko yeribhoni ye-graphene yikhono lokusheshisa lamanje eligeleza kuyo usebenzisa inkambu kazibuthe. Ngaphezu kwalokho, i-graphene inezikhathi ezingama-250 conductivity kagesi okukhulu kune-silicon.

Ngu idatha ethile, amaphrosesa asekelwe kuma-graphene transistors azokwazi ukusebenza kumafrikhwensi aseduze ne-terahertz, kuyilapho imvamisa yokusebenza yama-chips esimanje manje ilinganiselwe ku-4–5 gigahertz.

I-prototypes yokuqala ye-graphene transistors yavela eminyakeni eyishumi edluleKusukela lapho, onjiniyela uzama ukuthuthukisa izinqubo "zokuhlanganisa" amadivayisi asekelwe kuwo. Imiphumela yokuqala isanda kutholwa—ithimba labathuthukisi abavela eNyuvesi yaseCambridge ngoMashi kumenyezelwe mayelana nokwethulwa ekukhiqizeni i-graphene microcircuits yokuqalaOnjiniyela bathi umshini omusha ungasheshisa izinto zikagesi ngokuphindwe kashumi.

I-Hafnium dioxide ne-selenide

I-Hafnium dioxide nayo isetshenziswa ekukhiqizeni ama-microchips. kusukela ngonyaka we-2007Isetshenziselwa ukwenza ungqimba oluvikelayo esangweni le-transistor. Kodwa namuhla, onjiniyela bahlongoza ukuyisebenzisa ukuze bathuthukise ukusebenza kwama-silicon transistors.

/isithombe UFritzchens Fritz PD

Ekuqaleni konyaka odlule, ososayensi baseStanford kutholakeleukuthi uma isakhiwo se-crystal se-hafnium dioxide sihlelwa kabusha ngendlela ekhethekile, khona-ke kagesi njalo (obhekele ikhono le-medium ukudlulisa insimu kagesi) izokwenyuka ngaphezu kokuphindwe kane. Ukusebenzisa izinto ezinjalo ukwakha amasango e-transistor kunganciphisa kakhulu umthelela umphumela womhubhe.

Futhi ososayensi baseMelika uthole indlela Yehlisa usayizi wama-transistors wesimanje usebenzisa i-hafnium ne-zirconium selenides. Zingasetshenziswa njenge-insulator ephumelelayo yama-transistors esikhundleni se-silicon oxide. AmaSelenides azacile kakhulu (ama-athomu amathathu) kuyilapho egcina igebe elihle lebhendi. Lena ipharamitha enquma ukusetshenziswa kwamandla kwe-transistor. Onjiniyela sebevele sebenayo ukwazile ukudala ama-prototypes ambalwa asebenzayo wamadivayisi asekelwe ku-hafnium ne-zirconium selenides.

Onjiniyela manje kudingeka baxazulule inkinga yokuxhuma la ma-transistor—bathuthukise izixhumanisi zabo ezifanele, ezinosayizi omncane. Kungaleso sikhathi kuphela lapho ukukhiqizwa ngobuningi kuzokwenzeka khona.

I-Molybdenum disulfide

I-Molybdenum sulfide ngokwayo iyi-semiconductor empofu, engaphansi kwe-silicon. Kodwa-ke, ithimba lezazi zefiziksi ezivela eNyuvesi yaseNotre Dame lithole ukuthi amafilimu amancane e-molybdenum (ugqinsi lwe-athomu eyodwa) anezinto ezihlukile: ama-transistors asekelwe kuwo awawasebenzisi amandla amanje uma evaliwe futhi adinga amandla amancane okushintsha. Lokhu kuvumela ukuthi basebenze ngama-voltage aphansi.

I-Molybdenum transistor prototype ithuthukisiwe e-Lawrence Berkeley National Laboratory ngo-2016. Lo mshini unobubanzi be-nanometer eyodwa nje. Onjiniyela bathi lawa ma-transistors azosiza ukwelula uMthetho kaMoore.

Futhi i-transistor esekelwe ku-molybdenum disulfide ngonyaka odlule kwethulwe Onjiniyela abavela enyuvesi yaseNingizimu Korea. Ubuchwepheshe kulindeleke ukuthi buthole ukusetshenziswa kumasekethe okulawula we-OLED display. Kodwa-ke, ukukhiqizwa ngobuningi kwama-transistors anjalo kusekude kakhulu.

Naphezu kwalokhu, abacwaningi abavela eStanford isimangaloKukholakala ukuthi ingqalasizinda yesimanje yokukhiqiza i-transistor ingashintshwa ukuze isebenze namadivayisi e-molybdenum ngezindleko ezincane. Ukuthi amaphrojekthi anjalo angafezeka yini kusazobonakala.

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