AbakwaSamsung Electronics bazoqala ukukhiqizwa ngobuningi be-290-layer 9th generation 3D V-NAND flash memory chips kule nyanga, kubhala incwadi yaseNingizimu Korea i-Hankyung, icaphuna imithombo yezimboni. Ngonyaka olandelayo, umenzi uhlela ukukhulula ama-chip memory we-NAND angama-430. Umthombo wesithombe: Samsung
Source: 3dnews.ru
