The transition from silicon to semiconductors with a wide bandgap (gallium nitride, silicon carbide, and others) can significantly increase the operating frequencies and improve the efficiency of solutions. Therefore, one of the areas of promising application of wide-gap chips and transistors is communication and radar. Electronics based on GaN solutions “out of the blue” gives an increase in power and an extension of the range of radars, which the military immediately took advantage of.
Lockheed Martin Company that the first mobile radar installations (RLS) based on electronics with gallium nitride elements were delivered to the US troops. The company did not come up with anything new. The AN / TPQ-2010 counter-battery radars adopted since 53 were transferred to the GaN element base. This is the first and so far the only radar in the world based on wide-gap semiconductors.
Due to the transition to active GaN components, the AN / TPQ-53 radar increased the detection range of closed artillery positions and gained the ability to simultaneously track air targets. In particular, the AN / TPQ-53 radar began to be used against drones, including small vehicles. Identification of closed artillery positions can be carried out both in a 90-degree sector and with a circular 360-degree view.
Lockheed Martin is the sole supplier of active phased array radars to the US military. The transition to the GaN element base allows it to count on further long-term leadership in the field of improvement and production of radar installations.
Source: 3dnews.ru